Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
78352 | Solar Energy Materials and Solar Cells | 2012 | 5 Pages |
A simple analytical method is presented to perform a power-loss analysis of high-efficiency silicon Interdigitated Back Contact (IBC) solar cells. The method assumes one-dimensional current flows for both minority and majority carriers, as well as a constant gradient (or linear profile) of minority carrier concentration from the front to the back of the solar cell. The power-loss analysis method is applied to a real IBC silicon solar cell with a conversion efficiency of 23.3%.
► We propose a simple one-dimensional model for Interdigitated Back Contact (IBC) solar cells. ► This simple analytical model is used to perform a power-loss analysis on IBC silicon solar cells. ► An experimental 23.3%-efficient IBC solar cell is used as an example for a power-loss analysis. ► A pathway toward efficiencies greater than 24% is shown.