Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7835266 | Applied Surface Science | 2018 | 19 Pages |
Abstract
For GaAs, peak shifts were detected after cleaning with HF and (NH4)2S-solutions in an inert atmosphere (N2-gas). Although the (NH4)2S-cleaning in N2 is very efficient in removing the oxygen from the surface, the observed Ga- and As-peak shifts are smaller than those obtained after the HF-cleaning. It is shown that the magnitude of the shift is related to the surface composition. After Si-deposition on the (NH4)2S-cleaned surface, the Fermi-level shifts back to a similar position as observed for an as-received wafer, indicating that this combination is not successful in unpinning the Fermi-level of GaAs.
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Authors
J. Debehets, P. Homm, M. Menghini, S.A. Chambers, C. Marchiori, M. Heyns, J.P. Locquet, J.W. Seo,