Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7835391 | Applied Surface Science | 2018 | 18 Pages |
Abstract
Surface band bending and composition of Ga-polar n-GaN with different surface treatments were characterized by using angular dependent X-ray photoelectron spectroscopy. Upward surface band bending of varying degree was observed distinctly upon to the treatment methods. Besides the nitrogen vacancies, we found that surface states of oxygen-containing absorbates (O-H component) also contribute to the surface band bending, which lead the Fermi level pined at a level further closer to the conduction band edge on n-GaN surface. The n-GaN surface with lower surface band bending exhibits better linear electrical properties for Ti/GaN Ohmic contacts. Moreover, the density of positively charged surface states could be derived from the values of surface band bending.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Rong Huang, Tong Liu, Yanfei Zhao, Yafeng Zhu, Zengli Huang, Fangsen Li, Jianping Liu, Liqun Zhang, Shuming Zhang, An Dingsun, Hui Yang,