Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7835939 | Applied Surface Science | 2018 | 7 Pages |
Abstract
Low-resistivity, single-crystalline Cu2O films were realized on MgO (110) substrates through manipulating the oxygen pressure (PO2) of pulsed-laser deposition. X-ray diffraction and high resolution transmission electron microscopy measurements revealed that the films deposited at PO2 of 0.06 and 0.09âPa were single phase Cu2O and the 0.09-Pa-deposited film exhibited the best crystallinity with an epitaxial relationship of Cu2O (110)â¥MgO (110) with Cu2O (001)â¥MgO (001). The pure phase Cu2O films exhibited higher transmittances and larger band gaps with an optical band gap of 2.56âeV obtained for the 0.09âPa-deposited film. Hall-effect measurements demonstrated that the Cu2O film deposited at 0.09âPa had the lowest resistivity of 6.67âΩâcm and highest Hall mobility of 23.75âcm2âvâ1âsâ1.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Xiaohui Liu, Meng Xu, Xijian Zhang, Weiguang Wang, Xianjin Feng, Aimin Song,