Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7836855 | Applied Surface Science | 2018 | 6 Pages |
Abstract
Current-voltage (I-V) curves for the Al/polymer (9-vinylcarbazole) (PVK)/graphene oxide (GO):mica/PVK/indium-tin oxide (ITO) devices at 300Â K showed a current bistability with a maximum high conductivity (ON)/low conductivity (OFF) ratio of 2Â ÃÂ 104, which was approximately 10 times larger than that of the device without a PVK layer. The endurance number of ON/OFF switchings for the Al/PVK/GO:mica/PVK/ITO device was 1Â ÃÂ 102 cycles, which was 20 times larger than that for the Al/GO:mica/ITO device. The “erase” voltages were distributed between 2.3 and 3Â V, and the “write” voltages were distributed between â1.2 and â0.5Â V. The retention time for the Al/PVK/GO:mica/PVK/ITO device was above 1Â ÃÂ 104Â s, indicative of the memory stability of the device. The carrier transport mechanisms occurring in the Al/PVK/GO:mica/PVK/ITO and the Al/GO:mica/ITO devices are described on the basis of the I-V results and the energy band diagrams.
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Authors
Woo Kyum Kim, Chaoxing Wu, Dea Uk Lee, Hyoun Woo Kim, Tae Whan Kim,