Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7839645 | Journal of Luminescence | 2018 | 5 Pages |
Abstract
Influence of YAG:Ce crystal wafer thickness on their optical properties were investigated. The crystal wafers were cut from the YAG:Ce single crystal grown by the Czochralski technique. XRD patterns suggest the cubic phase of the grown single crystal. The transmittance spectra of YAG:Ce crystal wafers with different thicknesses show that they have strong absorption of Ce3+ ions in a wide wavelength range of 420-500â¯nm. Under the excitation at 465â¯nm, YAG:Ce crystal wafer shows emission band peaking at about 535â¯nm, which originates from the 5d1 â 4â¯f1 transition of Ce3+. The thickness of crystal wafer has obvious influence on Ce3+ emission intensity, which increases with the increasing wafer thickness and reach a maximum value at a thickness of 1.5â¯mm. Moreover, YAG:Ce crystal wafer shows excellently thermal stability. The emission intensity of Ce3+ emission at 510â¯K is about 68.3% of its initial intensity at 300â¯K. The fabricated WLED by the crystal chip with the thickness of 1.5â¯mm reaches a maximum luminous efficacy of 112.33â¯lm/W and a CCT value of 4458.
Keywords
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Yuguo Yang, Xuping Wang, Bing Liu, Yuanyuan Zhang, Xianshun Lv, Jing Li, Sa Li, Lei Wei, Huadi Zhang, Cong Zhang,