Comparative study of scintillation properties of Ga2O3 single crystals and ceramics

A series of bulk Ga2O3 were prepared by four different methods (Floating Zone (FZ), Edge-defined Film-fed Grown (EFG), spark plasma sintering (SPS) and conventional sintering in air) to obtain in single crystal and ceramic forms. In photoluminescence (PL), all the samples showed defect-related luminescence due to recombination between donors and acceptors; however, the peak position was different in each sample. The PL and scintillation decay curves were approximated by a sum of two exponential decay functions, and emission origins were attributed to to recombination between donors and acceptors. Pulse height spectrum of 241Am α-ray irradiation was demonstrated by using the present samples, and we confirmed that the one prepared by the EFG method indicated a clear full energy absorption peak, and the estimated light yield was 3200 ± 320 ph/5.5 MeV-α.