Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7839993 | Journal of Luminescence | 2018 | 5 Pages |
Abstract
In this paper, nanostructured ZnSe/ZnS multilayer thin films were prepared on silicon substrates by electron beam evaporation technique. This heterostructure takes advantage of the properties of ZnSe and ZnS, with ZnSe and ZnS acting as light-emitting and passivation layers, respectively. To enhance the luminescence performance, the optimal thickness of ZnS and ZnSe films and the annealing conditions were investigated. Nanostructured films with 3.5â¯nm ZnSe and 15â¯nm ZnS annealed at 660â¯Â°C for 100â¯min in N2 were found to be the optimal conditions. In addition, crystal structures and surface morphologies of the films were characterized, which showed outstanding blue emission. The excellent blue emission achieved in the optimized films indicates that nanostructured ZnSe/ZnS multilayer films could be used as novel luminescence materials.
Related Topics
Physical Sciences and Engineering
Chemistry
Physical and Theoretical Chemistry
Authors
Kai Ou, Shenwei Wang, Miaoling Huang, Yanwei Zhang, Yu Wang, Xiaoxia Duan, Lixin Yi,