Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7840249 | Journal of Luminescence | 2018 | 8 Pages |
Abstract
In this work reports the controlled synthesis and physical property characterization of nanoparticles of InP/ZnS type with core/shell structure obtained by the colloid chemistry method called "single-step procedure without precursor injection" at different synthesis temperatures. Varying the reaction temperature from 100 to 320â¯Â°C was possible to control the formation of the ZnS-shell on InP nanoparticles. Colour changes in the colloid dispersions were clearly observed according to the reaction temperature. The InP/ZnS nanoparticles chemical stoichiometry was determined by Energy-dispersive X-ray spectroscopy, demonstrating that with the increase of the reaction temperature the particles are obtained with a better stoichiometric ratio. The X-ray-diffraction analysis reveals that InP/ZnS nanoparticles showed zinc blende crystalline phase that was confirmed by High-resolution transmission electron microscopy. The average particle sizes (2-10â¯nm) were estimated by the Wang equation, which are confirmed analysing the grain average diameter by transmission electron microscopy measurements. The particles sizes indicate a high quantum confinement because of they are lower than the Bohr excitonic radius of InP. The obtained semiconductor nanoparticles presented crystalline structure InP-core/ZnS-shell, uniformity in size and exhibit a dependence of emission in the range of 450-650â¯nm measured by UV-Vis spectroscopy, which allowed obtaining the band gap of the nanostructures. The value of the bandgap could be tuned from 3.73 to 2.38â¯eV through the variation of the synthesis temperature. The emission peak in InP core quantum dots varied as a function of quantum dots size, ranging in the 2.61-2.17â¯eV region. The InP/ZnS nanoparticles present a high passivation for samples synthetized at 300â¯Â°C.
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Authors
F. Ángel-Huerta, M.P. González-Araoz, J.F. Sánchez-RamÃrez, J. DÃaz-Reyes, J.L. Herrera-Pérez, J.S. Arias-Cerón, J.G. Mendoza-Álvarez,