Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7840268 | Journal of Luminescence | 2018 | 18 Pages |
Abstract
Modification of K2ZrSi2O7 by the substitution of Zr by Hf shows that the incorporation of 20% Hf improves the PL of the material, while a complete replacement of Zr4+ by Hf4+ entirely quenches the charge-transfer based luminescence process. Quenching of the luminescence is also observed for the incorporation of Ln3+ (Lnâ¯=â¯Ce, Pr, Tb). The emission band of K2(Zr,Hf)Si2O7 is nicely located in the UV-C range yielding an overlap with the germicidal activation curve (GAC) close to that of Lu2Si2O7:Pr, i.e. of about 55%. This finding brands the material as an interesting compound for radiation sources to be used in disinfection devices.
Related Topics
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Authors
Rolf Gerdes, David Enseling, Markus Haase, Thomas Jüstel,