| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7846376 | Journal of Quantitative Spectroscopy and Radiative Transfer | 2018 | 10 Pages |
Abstract
The simulated results, in good agreement with the experimental ones, make it possible to establish the evolution laws of the dielectric functions with both parameters, temperature and pressure, applicable to any field requiring the use of undoped silicon carbide.
Related Topics
Physical Sciences and Engineering
Chemistry
Spectroscopy
Authors
Gilberto Domingues, Aubin Mekeze Monthe, Simon Guévelou, Benoit Rousseau,