| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 78465 | Solar Energy Materials and Solar Cells | 2012 | 5 Pages |
This study demonstrates the high performance of GaAs solar cells with dual-layer CdS quantum dots (QDs) carried by flexible polydimethylsiloxane (PDMS) film. Several parameters were enhanced, including the short circuit current, fill factor, and power conversion efficiency, which were measured under white light illumination similar to the solar spectrum. The flexible PDMS film was fabricated using the spin-coating technique, and was then used to embed dual-layer CdS QDs. Different concentrations of QDs were applied in this design to test the optimal combination. The proposed scheme enhances power conversion efficiency by 22%, compared to a GaAs solar cell without CdS QDs. The photon down-conversion capability in the ultraviolet (UV) range and additional anti-reflection capability in the longer visible-IR range were verified through the external quantum efficiency.
► Highly efficient GaAs solar cell with dual-layer CdS outperforms single-layer CdS and conventional GaAs solar cells. ► Increasing power conversion efficiency by 22%. ► Enhanced quantum efficiency due to photon down-conversion and anti-reflection capability. ► Layered PDMS structure enables optimized quantum dot dosage.
