Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
78470 | Solar Energy Materials and Solar Cells | 2012 | 4 Pages |
Abstract
The electronic properties of multicrystalline solar silicon materials are dominated by low-lifetime defect regions containing recombination-active grain boundaries and dislocations. Besides reducing the carrier collection probability, these regions increase the dark saturation current density J01, which governs the open circuit voltage. By applying lock-in thermography with spatial deconvolution it is shown that the dominant contribution to J01 comes from recombination-active grain boundaries and to a lower degree from intra-grain defects like dislocations.
Related Topics
Physical Sciences and Engineering
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Authors
S. Rißland, O. Breitenstein,