Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
78496 | Solar Energy Materials and Solar Cells | 2013 | 5 Pages |
Abstract
Defect interaction can take place in CdTe under Te and Bi rich conditions. We demonstrate in this work through first principles calculations, that this phenomenon allows a Jahn Teller distortion to form an isolated half-filled intermediate band in the host semiconductor band-gap. This delocalized energy band supports the experimental deep level reported in the host band-gap of CdTe at a low bismuth concentration. Furthermore, the calculated optical absorption of CdTe:Bi in this work shows a significant subband-gap absorption that also supports the enhancement of the optical absorption found in the previous experimental results.
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Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
Y. Seminovski, P. Palacios, P. Wahnón,