Nonvolatile memory devices based on Au/graphene oxide nanocomposites with bilateral multilevel characteristics

Current-voltage measurements on the Al/self-assembled Au nanoparticles inserted in graphene-oxide (GO) layer/indium-tin-oxide/glass devices at 300 K showed bilateral current bistabilities with four current states in a cell. The multilevel behaviors with four current states were obtained by applying different erasing voltages of −6, −12, and −18 V with a writing voltage of 3 V or different erasing voltages of 8, 14, and 18 V with a writing voltage of −5 V. The resistive memory devices demonstrated bilateral multilevel characteristics due to a nanocomposite consisting of Au nanoparticles inserted in a GO layer. The stabilities of the four current states with 1 × 10−1, 1 × 10−4, 1 × 10−6, and 1 × 10−8 A achieved for the devices by using different erasing voltages were maintained for retention cycles larger than 1 × 104 s under a continuous reading test. Memory operating mechanisms and multilevel characteristics based on the I-V curves were described by using the carrier-capture in the self-assembled Au nanoparticles and the local filament-path on the surface between the electrode and the GO layer.