Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7853551 | Carbon | 2014 | 28 Pages |
Abstract
The fluorination of graphite/graphite oxide (GO) and their derivatives has been widely investigated for how fluorine interacts with sp2/sp3 carbon; however, the mechanism of this interaction has not yet been elucidated. Fluorination of GO (FGO) at either 10 or 15Â psi for 24Â h, produced two new absorption bands at â¼743Â cmâ1 and 482Â cmâ1, and are attributed to the presence of out-of-plane surface fluorine bonds in FGO (absent in fluorographite - FG). IR studies confirmed the stability of the formed C-F bonds and defect formation due to the introduction of oxyfluorinated species into the graphitic carbon through fluorination of epoxides. Fluorination of GO resulted in â¼4-5 times more fluorine incorporation in bulk as compared to FG. (4.57 vs. 0.8Â at.% and 6.64 vs. 1.4Â at.% at 10 and 15Â psi, respectively). PXRD analyses also showed that the interlayer spacing of FGO expanded in the presence of intercalated C-F species and a defect formation was observed with the evidence of increase of the ID/IG ratio from Raman spectra. To this end, understanding the origin of surface C-F bonds and structural changes in FGO therefore leads to new applications such as implementation of FGO for sensing, nano-electronics and energy storage.
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Authors
Muge Acik, Sriram Yagneswaran, Weina Peng, Geunsik Lee, Benjamin R. Lund, Dennis W. Jr., Yves J. Chabal,