Highly enhanced p-type electrical conduction in wide band gap Cu1+xAl1−xS2 polycrystals

As potential critical p-type transparency electrode materials applied in solar cells, a series of the Cu- and Zn-doped CuAlS2 samples with band gaps over 3 eV have been prepared, and their optical and electrical properties have been thoroughly investigated. Conductivities as high as 250 S cm−1 are achieved at a Cu doping level of 8 mol%, which are among the highest values known for p-type transparent materials and sufficient for collecting holes in solar cells. A high mobility of 21.2 cm2 V−1 s−1 is also reached at the same doping level. The origin of conductivity enhancement by Cu doping and the structure-optoelectrical property relationship has been elucidated.

Graphical Abstractp-Type transparency conductor Cu-doped CuAlS2 has been prepared with Cu/S network as effective hole conduction pathway (left) and excellent p-type conductivities (right).Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► p-Type transparent semiconductor CuAlS2 is significantly optimized by Cu doping. ► Conductivities as high as 250 S cm−1 are achieved at a Cu doping level of 8 mol%. ► A high mobility of 21.2 cm2 V−1 s−1 is reached at a Cu doping level of 8 mol%. ► Visible-light absorption is not increasing with Cu doping level.