| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 78729 | Solar Energy Materials and Solar Cells | 2011 | 4 Pages |
Abstract
A gallium phosphide (GaP) photovoltaic junction is grown by molecular beam epitaxy (MBE) on a GaP substrate. An anti-reflection coating of polymethyl methacrylate (PMMA) is applied and the cell is measured under concentrations of 1× and 10.7× in an outdoor setting. Efficiencies up to 2.6% and open circuit voltages up to 1.57 V are reported.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► GaP n–p solar junction grown by MBE.► PMMA deposited as anti-reflection coating.► Solar measurements taken outdoors in natural sunlight and under concentration.► Measurements corroborated with simulation.► Efficiency of 2.6% at 1 sun and Voc of 1.57 V at 10.7× concentration achieved.
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Authors
C.R. Allen, J.M. Woodall, J.-H. Jeon,