| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7873435 | Synthetic Metals | 2018 | 6 Pages |
Abstract
A contemporary hole injection bilayer structure (HIBL) based on molybdenum trioxide (MoO3)-doped N,Nâ²-Di(1-naphthyl)-N,Nâ²-diphenyl-(1,1â²-biphenyl)-4,4â²-diamine (NPB) has been demonstrated and compared with several efficient transition metal oxide (TMO)-based hole injection layers (HILs). Device performances of OLEDs was significantly improved by the utilization of this HIBL. Results of electroluminescence (EL) spectra, hole-only current density-voltage test and capacitance measurement by impedance spectroscopy (IS) are indicative of enhanced hole injection and transport characteristics. Moreover, ultraviolet photoelectron spectroscopy (UPS) results authenticated a cascading highest occupied molecular orbital (HOMO) energy level contributed to both improved hole injection and transport properties, therefore leads to better carrier balance and device efficiency in OLEDs.
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Authors
Chi-Ting Tsai, Ya-Han Liu, Jian-Fu Tang, Po-Ching Kao, Chung-Hao Chiang, Sheng-Yuan Chu,