| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7874252 | Synthetic Metals | 2012 | 6 Pages |
Abstract
⺠The 6T/nâ-Si junction has a current rectification characteristic explained by a Schottky heterojunction model. ⺠The Schottky barrier height and ideality factor were estimated to be 0.75-0.79 eV and 2.5, respectively. ⺠The depletion layer is generated solely in the nâ-Si layer on a sub-micron scale. ⺠This heterojunction allows for power generation with power conversion efficiencies up to 0.4% with a simulated solar light exposure of 50 mW/cm2.
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Authors
Y. Takanashi, N. Oyama, K. Momiyama, Y. Kimura, M. Niwano, F. Hirose,