| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7874847 | Synthetic Metals | 2011 | 4 Pages |
Abstract
ⶠElectrical characteristics of the pentacene transistor subjected to a UV light excitation at a wavelength of 365 nm were analyzed. ⶠA significant increase in the drain current of the pentacene thin film transistor under a UV excitation of 365 nm is observed with a maximum photosensitivity of 4.51 in the depletion regime. ⶠIt is evaluated that the pentacene thin film transistor can be used in UV photo-detecting devices.
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Authors
Fahrettin Yakuphanoglu, W. Aslam Farooq,