| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 78759 | Solar Energy Materials and Solar Cells | 2011 | 5 Pages |
Cu2ZnSnS4 thin films have been successfully prepared by a novel synthesis process that involves a single step deposition of Cu2ZnSnS4 followed by a post-annealing treatment at 550 °C for 60 min in the atmosphere of N2+H2S (5%). The microstructure, morphology, composition and optical property of the film have been investigated in detail. It is found that the Na2S2O35H2O concentration in the solution has a significant effect on the Cu2ZnSnS4 thin films. X-ray diffraction data indicates that the annealed Cu2ZnSnS4 thin films have a kesterite structure with preferred orientation along the (1 1 2) plane. Uniform and compact topographies are observed in some annealed films. From the energy dispersive X-ray spectroscopy analysis, it can be seen that Cu-poor and Zn-rich Cu2ZnSnS4 thin films have been obtained. The direct band gap energy of the film is about 1.5 eV.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Cu2ZnSnS4 films were prepared using electrodeposition followed by annealing treatments. ► Na2S2O35H2O concentration has a significant effect on the Cu2ZnSnS4 thin films. ► Direct band gap energy of the film with 10 mM Na2S2O35H2O concentration is about 1.5 eV.
