Large field-induced strain, giant strain memory effect, and high thermal stability energy storage in (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric single crystal

A large field-induced strain value of 0.76%, a giant strain memory effect of 0.51%, and a good thermal stability of energy storage performance with the recoverable energy variation less than 5% in a wide temperature range were achieved in the (Pb,La)(Zr,Sn,Ti)O3 tetragonal antiferroeletric single crystals grown by the conventional flux method.511