| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 78780 | Solar Energy Materials and Solar Cells | 2011 | 7 Pages |
In order to investigate the effect of CdCl2 heat treatment on the physical properties of CdTe thin films grown by a sputtering method, the CdTe thin films were coated with CdCl2. The recrystallization, grain growth, randomization, and reaction kinetics were investigated by monitoring the phase transition of CdCl2-heat-treated CdTe specimens during temperature ramp annealing or isothermal soaking by using in-situ time-resolved high-temperature X-ray diffraction. The results of annealing show that the recrystallizations of CdTe (1 1 1) and other planes do not occur simultaneously, but sequentially in terms of temperature. The results of isothermal soaking imply that the Avrami diffusion-controlled reaction model fits well with the experimental data. This proves that the CdCl2 diffusion process is the dominant factor in the CdTe recrystallization mechanism.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Phase evolution and reaction kinetics study of CdTe thin films during CdCl2 heat treatment. ► The recrystallizations of CdTe (1 1 1) and others occur sequentially depending on temperature. ► The Avrami diffusion-controlled reaction model fits well with experimental data. ► CdCl2 diffusion process is a primary factor in the CdTe recrystallization process.
