Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7879588 | Acta Materialia | 2015 | 7 Pages |
Abstract
HfO2-based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (EÂ <Â twofold coercive field, 2Ec), the reversal process is dominated by the thermal activation on domain wall motion and domain nucleation; while in the high-field regime (EÂ >Â 2Ec), a non-equilibrium nucleation-limited-switching mechanism dominates the reversal process. The optimum field for ferroelectric random access memory (FeRAM) applications was determined to be around 2.0Â MV/cm, which translates into a 2.0Â V potential applied across the 10Â nm thick films.
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Authors
Dayu Zhou, Yan Guan, Melvin M. Vopson, Jin Xu, Hailong Liang, Fei Cao, Xianlin Dong, Johannes Mueller, Tony Schenk, Uwe Schroeder,