Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7880284 | Acta Materialia | 2015 | 8 Pages |
Abstract
Enhanced photovoltaic effects are demonstrated in an In2O3-SnO2/BiFe0.6Sc0.4O3/LaNiO3 (ITO/BFSO/LNO) ferroelectric thin film heterostructure. The Sc-substitution greatly improves the bulk conductivity of BiFeO3 (BFO) and modifies the energy band alignment in the ITO/BFSO/LNO capacitor structure, where a tunable Schottky-to-Ohmic contact at the BFSO/LNO interface and an Ohmic ITO/BFSO contact are purposely established. In negatively poled BFSO films, constructive photovoltaic effects at both the bulk and the BFSO/LNO interface lead to a large Voc up to 0.6Â V and a 5-fold enhancement in efficiency compared with conventional BFO films. In addition, ferroelectric polarization modulation of the Schottky barrier height at the BFSO/LNO interface results in a conversion between Schottky and Ohmic conduction, which gives rise to switchable high- and low-resistance states. The present work demonstrates a strategy effective to realize ferroelectric-based thin film structure with enhanced photovoltaic effects and memory function.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Zhen Fan, Wei Ji, Tao Li, Juanxiu Xiao, Ping Yang, Khuong Phuong Ong, Kaiyang Zeng, Kui Yao, John Wang,