Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7882852 | Acta Materialia | 2012 | 12 Pages |
Abstract
Sources of plastic strengthening in [0Â 0Â 1] epitaxial Cu/Ni multilayer thin films are examined using measurements of in-plane lattice parameter and hardness (H) for films of different bilayer period (Î) and Ni volume fraction (% Ni). Similar to other investigations, H for 50% Ni-50% Cu films increases with decreasing bilayer period down to ÎÂ =Â 20Â nm, where interfaces are coherent. A new finding is that H for semi-coherent films increases with % Ni. This strategy yields the largest reported H for this system (5.2Â GPa for 60% Ni/40% Cu, ÎÂ =Â 60Â nm), showing that smaller is not always stronger. The rationale for the increased H is the development of a large interfacial dislocation density during the elasto-plastic transition to fully plastic yield. This strengthens Cu/Ni interfaces to slip propagation. The results are interpreted with a dislocation-based model that furnishes estimates of interfacial dislocation line energies, pinning strengths to confined layer slip, and interface barrier strengths to slip transmission.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
John S. Carpenter, Amit Misra, Peter M. Anderson,