Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7886109 | Ceramics International | 2018 | 17 Pages |
Abstract
Mechanical alloying and spark plasma sintering were used to fabricate dense and nanostructured SiC at 1525â¯Â°C under 40â¯MPa pressure. Round-shaped nanopowder (d50: 108â¯nm) consisting of amorphous Si-Al-C and β-SiC crystallites was prepared using high-energy ball-milling. Aluminum was homogeneously distributed in the Si-Al-C powder. The addition of Al during the milling process caused the decrement in the 3C-SiC crystallinity and promoted the generation of stacking faults in 3C-SiC. Dense SiC with the grain size of 132â¯nm was fabricated after a two-step sintering at 1600-1550â¯Â°C. The Al content in the sintered SiC grain was more than 3 times higher than the reported values. Grain boundary diffusion and lattice diffusion were activated due to the high concentration of Al in the powder.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Bola Yoon, Sea-Hoon Lee, Lin Zhao, Heesoo Lee,