| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7888004 | Ceramics International | 2018 | 16 Pages |
Abstract
MgO-doped BaTiO3 (BaTiO3/MgO) ceramics were prepared by a solid-state sintering method. The effects of MgO doping on the dielectric properties of BaTiO3/MgO were investigated in terms of its microstructural development. The BaTiO3/MgO was characterized by scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and x-ray powder diffraction. Results show that grain growth of the BaTiO3/MgO during sintering was inhibited by adding MgO at least 0.5Â mol%. It resulted in a high resistance of the BaTiO3/MgO sintered at high temperature. The BaTiO3/MgO possessed a broad temperature stability and met Electronic Industries Association (EIA) Ã7R specification. The improved dielectric properties of the BaTiO3/MgO are attributed to the decreased tetragonality of BaTiO3 lattice due to Mg2+ substitute for Ti4+.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Yi Tsung Lin, Shih Fu Ou, Ming Horng Lin, Yu Ru Song,