Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7888735 | Ceramics International | 2018 | 26 Pages |
Abstract
SrTiO3-based films doped with different Al-precursors were prepared by sol-gel methods and the dielectric strengths and leakage currents of the materials were investigated. The best performance was found in SrTiO3 films doped with Al2O3 nanoparticles (nano-Al2O3). When 5Â mol% of nano-Al2O3 was added to SrTiO3 films with Al electrodes, the dielectric strength was enhanced to 506.9Â MV/m compared with a value of 233.5Â MV/m for SrTiO3 films. The energy density of the 5Â mol% nano-Al2O3 doped SrTiO3 films was 19.3Â J/cm3, which was also far higher than that of the SrTiO3 films (3.2Â J/cm3). These results were attributed to interfacial anodic oxidation reactions, which were experimentally confirmed by cross-sectional transmission electron microscope studies and theoretically modelled based on Faraday's laws. The films with added nano-Al2O3 featured many conducting paths at the interfaces between the host phase and the guest nano-Al2O3, which promoted ion transport and contributed to the strong anodic oxidation reaction capability of the 5Â mol% nano-Al2O3 doped SrTiO3 films.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Yong Peng, Manwen Yao, Xi Yao,