| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7893426 | Corrosion Science | 2018 | 5 Pages |
Abstract
Nb doping substantially changes the oxidation mechanism and significantly enhances its oxidation resistance of Ti3SiC2 at 800â¯Â°C. After Nb doping, the oxidation of Ti3SiC2 is only controlled by the inward diffusion of O, while the outward diffusion of Ti is restrained totally. The oxide layer structure changes from a duplex-layer of TiO2 outer layer and TiO2+SiO2 mixture inner layer to a single TiO2+SiO2 mixture layer. It is proposed that Nb doping decreases the concentrations of oxygen vacancies and Ti interstitials in the formed TiO2, leading to the completely restrained outward diffusion of Ti and the decreased oxidation rate.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Lili Zheng, Qingsong Hua, Xichao Li, Meishuan Li, Yuhai Qian, Jingjun Xu, Jianmin Zhang, Zongmin Zheng, Zuoqiang Dai, Hongxin Zhang, Tiezhu Zhang,