| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 78958 | Solar Energy Materials and Solar Cells | 2012 | 5 Pages |
The ability to alloy Cu2ZnSn(S,Se)4 with Ge provides a unique ability to band-gap engineer the absorber film by controlling the relative cation ratios. In here, a preliminary study on adjusting the Ge to Sn ratio is shown to significantly improve the device performance of CZTSSe thin film solar cells. CZTGeSSe solar cell with total area power conversion efficiency as high as 8.4% has been realized using a nanocrystal-based thin film deposition process. The selenized CZTGeSSe thin film exhibits a bi-layer structure where the thin sintered large-grain layer could be responsible for the poor red-response in external quantum efficiency of the resulting solar cell.
Graphical AbstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Solution synthesis of Ge alloyed CZTS nanocrystals for photovoltaic application. ► Selenization of the nanocrystal film results in CZTGeSSe thin films with a bi-layer microstructure. ► Ge alloyed CZTSSe solar cell shows enhanced open circuit voltage, fill factor, and power conversion efficiency.
