Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7897755 | Journal of the European Ceramic Society | 2018 | 11 Pages |
Abstract
The kinetics of silica growth during passive oxidation of SiC was studied using an original interferometric method carried out in a reactor specifically designed for that purpose. The influence of various oxidant species, O2, H2O, CO2 as well as their mixtures was investigated in a high temperature domain ranging from 1550 °C to 1850 °C at atmospheric pressure. This method is an efficient way to measure the various oxidation regimes usually described by the Deal-Grove model. Both the linear and parabolic rate constants are found to be independent of gas phase composition above 1700 °C, and to increase with oxygen partial pressure below 1700â¯Â°C for PO2â¯>â¯20â¯kPa. In the parabolic growth regime, we observed a transition from a low temperature interstitial-dominant to a high temperature network-dominant oxygen transport in the silica scale. The present results suggest the existence of a similar transition in the linear growth regime.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Mathieu Q. Brisebourg, Francis Rebillat, Francis Teyssandier,