Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7897957 | Journal of the European Ceramic Society | 2018 | 6 Pages |
Abstract
Dielectric ceramics have raised particular interest since they enable pulsed-power systems to achieve high voltage gradient and compact miniaturization. In this work, x wt%Ni2O3 doped Al2O3-SiO2-TiO2 based dielectric ceramics were prepared using conventional solid-state reaction and the effects of Ni2O3 on the crystal structure, dielectric properties and dielectric breakdown strength were investigated. It was found that with the doping of Ni2O3, the Al2O3-SiO2-TiO2 based dielectric ceramics became denser and the distribution of each phase was more uniform. For the composition of xâ¯=â¯2.0, the dielectric breakdown strength was increased into 82.1â¯kV/mm, more than twice compared with that of the undoped one. In addition, the relationship between the dielectric breakdown strength and the resistance of Al2O3-SiO2-TiO2 based dielectric ceramics was discussed. The results show that the doping of Ni2O3 is a very feasible way to improve the dielectric breakdown strength and optimize the dielectric properties for the Al2O3-SiO2-TiO2 based dielectric ceramics.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Ye Huang, Ying Chen, Xin Li, Genshui Wang, Liansheng Xia, Yi Liu, Yi Shen, Jinshui Shi, Xianlin Dong,