Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
78985 | Solar Energy Materials and Solar Cells | 2012 | 5 Pages |
Abstract
Highly conductive GaN film was prepared by magnetron sputtering and this was applied as an anti-reflection layer (ARL) between a transparent conducting oxide and microcrystalline silicon (μc-Si:H) in order to decrease optical reflection. The efficiency (8.81%) of μc-Si:H single junction thin film solar cell with the proposed GaN ARL exceeded that of the cell (8.36%) with the widely used TiO2/ZnO bilayer ARL. Moreover, the proposed GaN ARL requires no protection layer against hydrogen plasma such as ZnO overcoating (∼10 nm) in case of the TiO2/ZnO bilayer. GaN ARL can replace the TiO2/ZnO bilayer ARL in terms of high performance and simple fabrication process.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
Dong-Won Kang, Jang-Yeon Kwon, Jenny Shim, Heon-Min Lee, Min-Koo Han,