Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7904296 | Journal of Science: Advanced Materials and Devices | 2017 | 23 Pages |
Abstract
Vertical organic field-effect transistors (VOFETs) provide an advantage over lateral ones with respect to the possibility to conveniently reduce the channel length. This is beneficial for increasing both the cut-off frequency and current density in organic field-effect transistor devices. We prepared P3HT (poly[3-hexylthiophene-2,5-diyl]) VOFETs with a surrounding gate electrode and gate dielectric around the vertical P3HT pillar junction. Measured output and transfer characteristics do not show a distinct gate effect, in contrast to device simulations. By introducing in the simulations an edge layer with a strongly reduced charge mobility, the gate effect is significantly reduced. We therefore propose that a damaged layer at the P3HT/dielectric interface could be the reason for the strong suppression of the gate effect. We also simulated how the gate effect depends on the device parameters. A smaller pillar diameter and a larger gate electrode-dielectric overlap both lead to better gate control. Our findings thus provide important design parameters for future VOFETs.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Bojian Xu, Tamer Dogan, Janine G.E. Wilbers, Michel P. de Jong, Peter A. Bobbert, Wilfred G. van der Wiel,