Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices

Optimization of photoluminescence intensity of green-emitting InGaN/GaN multiple quantum wells deposited on a template consisting of low-indium-content short-period superlattice was studied by growing the structures at different temperatures for active layer and template. The importance of carrier localization is revealed. The temperatures for growing the template and the active layer predominantly influence large-scale and small-scale potential fluctuations experienced by nonequilibrium carriers, respectively, while the difference between the temperatures impacts the formation of nonradiative recombination centers, and has to be maintained small to ensure high photoluminescence intensity.