| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7907103 | Optical Materials | 2018 | 5 Pages |
Abstract
Perovskite light emitting diodes (PeLEDs) now emerge as a promising new optoelectronic application field for these amazing semiconductors. For the purpose of investigating the device structures and light emission mechanisms of PeLEDs, we have fabricated green PeLEDs based on the ITO/Al2O3/CsPbBr3 heterojunction structure. The emission layer inorganic perovskite CsPbBr3 film with small grain sizes (â¼28.9Â nm) was prepared using a two-step method. The device exhibits a typical rectification behavior with turn-on voltage of â¼6Â V. The EL emission band is narrow with the FWHM of â¼25Â nm. The peak EQE of the device was â¼0.09%. The working mechanism of the device is also discussed. The result of the present work provides a feasible innovation idea of PeLEDs fabrication and great potentials for the development of perovskite based LEDs.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Shiwei Zhuang, Xue Ma, Daqiang Hu, Xin Dong, Yuantao Zhang, Baolin Zhang,