Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7907418 | Optical Materials | 2018 | 5 Pages |
Abstract
GaN based ultraviolet multiple quantum well structures grown on a c-plane sapphire substrate by metal organic chemical deposition showed a microstructure with a large amount of huge hexagonal hillocks. The polarity of the sample is confirmed by etching with sodium hydroxide solution. The luminous intensity distribution of a typical hexagonal hillock was investigated by the phototluminescent mapping and the luminous intensity at hillock top regions was found to be 15 times higher than that of the regions around hillocks. The reduction of dislocations, the decreasing of the quantum confirmed stack effect caused by semipolar plane and the inclination of the sidewalls of the hexagonal hillock were responsible for the enhancement of luminous intensity.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Jinjuan Du, Shengrui Xu, Peixian Li, Jincheng Zhang, Ying Zhao, Ruoshi Peng, Xiaomeng Fan, Yue Hao,