Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7907876 | Optical Materials | 2018 | 7 Pages |
Abstract
This paper demonstrates the behavior of defect reduction in un-doped GaN (u-GaN) grown on a commercial dome-shaped patterned-sapphire substrate (CDPSS). Residual strain inside the u-GaN grown on the CDPSS have been investigated as well. As verified by the experimentally measured data, the limited growth rate of the u-GaN on the sidewall of the CDPSS enhances the lateral growth of the GaN on the trench region while increasing the growth time. This subsequently contributes to improve the crystalline quality of the GaN on the CDPSS. The more prominent dislocations occur in the u-GaN epilayers on the CDPSS after reaching the summit of the accumulated strain inside the epilayers. Such prominent bent dislocations improve their blocking abilities, followed by the achievement of the better crystalline quality for the growth of the u-GaN on the CDPSS.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Po-Hsun Chen, Vin-Cent Su, Shang-Hsuan Wu, Ray-Ming Lin, Chieh-Hsiung Kuan,