Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7908617 | Optical Materials | 2016 | 6 Pages |
Abstract
Gamma-AlON: 0.2Eu2+, Tb3+ phosphors were firstly synthesized via a high temperature solid-state reaction. For the phosphors, luminescence properties as well as energy transfer mechanism were investigated in detail. The energy transfer from Eu2+ to Tb3+ in the γ-AlON host was ascribed to the dipole-dipole mechanism, and the efficiency and critical distance in the energy transfer process were also estimated. γ-AlON: 0.2Eu2+, Tb3+ phosphors showed a broad-band emission centered at about 405 nm and other several emission peaks, which were assigned to the 5d-4f transition of Eu2+ ions and the 5D4-7FJ (J = 6, 5, 4, and 3) characteristic transitions of Tb3+ ions, respectively. The results indicated that γ-AlON: 0.2Eu2+, Tb3+ phosphors have great potential application in white light-emitting diodes due to its broad-band excitation in the ultraviolet range and the high-efficient green light emission.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Jiantao Zhang, Chaoyang Ma, Zicheng Wen, Miaomiao Du, Jiaqi Long, Ran Ma, Xuanyi Yuan, Junting Li, Yongge Cao,