Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7908770 | Optical Materials | 2016 | 4 Pages |
Abstract
This study presents the first investigation of rapid dynamical processes that occur in pure CeO2 thin film, using ultra fast pump-probe spectroscopy at room temperature. For this purpose we have used a single (200) oriented CeO2 film deposited on biaxially textured Ni-W substrate by RF magnetron sputtering technique. The ultrafast transient spectra show initial sharp rise transition followed by an exponential photon decay. This rise time is about 10Â ps irrespective of the probe wavelengths range 500-800Â nm. The initial decay constant (Ï) at 500Â nm probe wavelength is found to be 171Â ps, while at 800Â nm probe wavelength it is 107.5Â ps. The ultrafast absorption spectra show two absorption peaks at 745 and 800Â nm, and are attributed to the electronic transitions from 2F7/2-2F5/2 and 1S0-1F3 respectively. The relatively high intensity absorption peak at 745Â nm indicates dominant f-f electronic transition. Further, the absorption peak at 745Â nm splits into two distinct peaks with respect to delay time, and is attributed to the charge transfer in between Ce4+ and Ce3+ ions. These results indicate that CeO2 itself is a potential candidate and can be used for optical applications.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Preetam Singh, K.M.K. Srivatsa, Mukesh Jewariya,