The role of operations after the deposition on the performance of SiOx films in optoelectronics devices

In this study, we have investigated phase separation, silicon Nano crystal (Si-NC) formation and optoelectronics properties of Si oxide (SiOx, 0.7 < x < 1.3) films in high-vacuum annealing and ion bombardment conditions. The SiOx films were deposited by physical vapor deposition (PVD). The internal structure properties of these films were the main factor in applications of optoelectronic. Possible changes in the structure, composition and electro physical properties were investigated by FTIR and TEM spectroscopy. The measurements show that SiOx film is the dominant phase in the ultra-thin layer. Also, high-temperature annealing ion bombardment results in further increase of the phase separation of the whole layer.