Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7910117 | Scripta Materialia | 2018 | 5 Pages |
Abstract
The phase change memory with Al-Sb-Ge alloy is investigated for the feasibility of embedded system and the potential possibility of multilevel data storage. Compared with conventional CGST, the selected composition of Al15Sb53Ge32 has a higher crystallization temperature and an outstanding 10-year data retention temperature, especially maintains the fast operation speed in devices. Besides, the thickness variation between amorphous and crystalline states is distinctly reduced below 3.6% prolonging the lifetime of a PCM device. TEM results prove that the grain growth is suppressed by Ge atoms, resulting in good thermal stability. Moreover, the sequential crystallization of Sb-rich and Ge regions may be advantageously used for multilevel data storage. For PCM cells based on Al15Sb53Ge32 material, a fast speed of 50â¯ns and a high endurance of more than 2.3â¯Ãâ¯104 are all demonstrated to be realized and a reliable tripe-level resistance state of the phase change memory cell is observed.158
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Yuan Xue, Sannian Song, Shuai Yan, Tianqi Guo, Zhitang Song, Songlin Feng,