| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 79102 | Solar Energy Materials and Solar Cells | 2011 | 4 Pages |
The hydrogenated silicon nitride films (SiNx:H) deposited by plasma enhanced chemical vapor deposition (PECVD) technique is commonly used as an antireflection coating as well as surface passivating layer of crystalline silicon solar cells. The refractive indices of SiNx:H films could be changed by varying the growth gas ratio R(=NH3/SiH4+NH3) and annealing temperature. For optimum SiNx:H film, the optical and chemical characterization tools by varying the film deposition and annealing condition were employed in this study. Metal-insulator-semiconductor (MIS) devices were fabricated using SiNx:H as an insulator layer and they were subjected to capacitance–voltage (C–V) and current–voltage (I–V) measurements for electrical characterization. The effect of rapid thermal annealing (RTA) on the surface passivation as well as antireflection properties of the SiNx:H films deposited at various process conditions were also investigated for the fabrication of low cost and high efficiency silicon solar cells.
