Highly enhanced thermoelectric properties of p-type CuInSe2 alloys by the Vacancy Doping

Fig. 1 (a)~(c) The schematic diagram of the phonon scattering by grain boundaries and vacancy located inside the crystal; ZT value (d) for Cu1−xIn1−ySe2.05 (x = y = 0; x = 0, y = 0.01; x = 0.01, y = 0; x = y = 0.01) bulk samples, the various filled symbols represent the experimental measurements from Yao et al. [13] and Maria et al. [22] (e).256