| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7912228 | Scripta Materialia | 2016 | 5 Pages |
Abstract
Compared with Sb2Se, Si-Sb-Se material possesses higher crystallization temperature, indicating better thermal stability. The growth dominated crystalline mechanism makes Si-Sb-Se-based phase change memory device can have fast SET/RESET speed (8Â ns). Si-Sb-Se material is proved to be a promising candidate for phase change memory with good thermal stability and high phase change speed.127
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Yifeng Hu, Hua Zou, Li Yuan, Jianzhong Xue, Yongxing Sui, Weihua Wu, Jianhao Zhang, Xiaoqin Zhu, Sannian Song, Zhitang Song,