Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7913591 | Scripta Materialia | 2014 | 4 Pages |
Abstract
The effects of vanadium substitution on the dielectric properties of amorphous SrBi2Ta2O9 (SBT) thin films have been investigated. Vanadium substitution at the Ta site exists in the V3+ valence state and acts as an acceptor, reducing the number of intrinsic oxygen vacancies and the leakage current of the amorphous SBT thin films. Furthermore, the dielectric properties are also improved. The leakage current values of the 92 and 31 nm thick SBTV thin-film capacitors were 8.8 nA cmâ2 and 0.62 μA cmâ2 at 1 V, respectively.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Min-Gyu Kang, Kwang-Hwan Cho, Sahn Nahm, Seok-Jin Yoon, Chong-Yun Kang,