| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 79136 | Solar Energy Materials and Solar Cells | 2011 | 4 Pages |
We present the novel use of spectroscopic ellipsometry (SE) for the development of a-Si:H solar cell. SE is a very fast and useful tool to measure various optical properties of thin film. In the case of a-Si:H thin film analysis, generally, SE is used to estimate the film thickness, roughness, void fraction, optical constants such as (n,k), and so forth. In this study, optical parameters from SE measurements were analyzed with relation to structural and electrical properties of a-Si:H thin film for solar cell. By analyzing IR absorption spectra and conductivity measurements, it was affirmed that <ε2> and parameter A by Tauc–Lorentz model fitting of SE data are representative parameters qualifying a-Si:H thin film, and that they have close relationships with FF and light induced degradation property of solar cells. Based on the analysis, solar cells that have i-layers with various Eg were optimized. By this research, easier and faster methodology to develop a-Si:H thin film for thin film Si solar cells using SE measurements was established.
