Article ID Journal Published Year Pages File Type
79156 Solar Energy Materials and Solar Cells 2011 4 Pages PDF
Abstract

The influence of Se beam pressure on defect properties in Cu(In1–x,Gax)Se2 (CIGS)-based solar cells fabricated by the three-stage process was investigated by admittance spectroscopy. The Se beam pressure was varied from 1.3×10−3 to 4.4×10−3 Pa, at the position of the samples, by varying the Se cell temperature. The spectra for all samples show three distinct peaks denoted as α, β, and ζ with activation energies of 20, 150, and 300 meV, respectively. The trap density of ζ increased from 5×1014 to 4×1015 cm−3 with decrease in Se beam pressure; the trap densities of α and β did not change. These results suggest that the origin of ζ is related to the Se deficiency. The density of ζ seems to correlate with the cell efficiency. Therefore, it is important to control the Se beam pressure in order to obtain highly efficient solar cells.

Related Topics
Physical Sciences and Engineering Chemical Engineering Catalysis
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